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Recent resist developments in Japan—a review
Author(s) -
ogaki Saburo
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231802
Subject(s) - resist , materials science , polystyrene , photoresist , electron beam lithography , etching (microfabrication) , polymer , lithography , glycidyl methacrylate , dry etching , polymer chemistry , wafer , nanotechnology , copolymer , composite material , optoelectronics , layer (electronics)
Several kinds of resist materials for microlithography have been developed in Japan. Poly(4‐vinyl phenol) sensitized with 3,3′‐diazidodiphenyl sulfone has been proved to be a high resolution negative deep UV resist with high sensitivity and good resistance to dry etching. The use of this resist enables a 1:1 projection printer to replicate fine patterns with 1 micrometer (μm) minimum feature size at the rate of 90 wafers per hour. Poly(methyl isopropenyl ketone) (PMIPK) has been investigated as a positive deep UV resist. Several resists composed of PMIPK with or without sensitizers are commercially available. Dry‐developable photo‐ and deep UV resists comprising PMIPK and aromatic bisazides have been developed. Poly(glycidyl methacrylate) having the sensitivity of 0.4 micro Coulomb (μC)/per square centimeter (cm 2 ) is now being routinely used as a negative electron beam resist in the fabrication of chromium masks. Recently, aromatic polymers such as chloromethylated polystyrene, iodinated polystyrene, chloromethylated poly(α‐methylstyrene), poly(vinylnaphthalene) and its copolymers have been investigated as dry‐etching resistant electron beam resists.