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Electron beam lithography of copolymeric resists containing styrenes and allyl acrylates
Author(s) -
Shu Jing,
Lee Wei,
Venable Larry,
Varnell Gil
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231712
Subject(s) - resist , copolymer , materials science , styrene , monomer , polymer chemistry , electron beam lithography , methacrylate , irradiation , lithography , resolution (logic) , electron beam processing , polymer , nanotechnology , composite material , optoelectronics , physics , layer (electronics) , artificial intelligence , computer science , nuclear physics
A series of electron beam sensitive negative resists based on styrene allyl methacrylate copolymers and substitutional modifications thereof were prepared and their resist characteristics were investigated. Depending on the molecular parameters, such as monomeric ratios, molecular weights and molecular weight distributions, the sensitivity to electron beam irradiation of the copolymer resist can vary from 10 −7 μC/cm 2 to 10 −6 μC/cm 2 . A styrene allyl methacrylate copolymer having a 57/43 mol‐percent and a molecular weight of 3.3 × 10 5 shows a sensitivity of 1.4 μC/cm 2 (Dg 0.5 ) and a resolution of 1.10 μm line/space at 6000A remaining thickness.