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Evaluation of poly(allyl methacrylate)‐co‐(hydroxyethyl methacrylate) as negative electron‐beam resist
Author(s) -
Tan Zoilo C. H.,
Georgia Sharon S.
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231709
Subject(s) - resist , materials science , dispersity , methacrylate , copolymer , dry etching , electron beam processing , electron beam lithography , polymer chemistry , analytical chemistry (journal) , polymer , irradiation , etching (microfabrication) , composite material , chemistry , organic chemistry , physics , layer (electronics) , nuclear physics
Poly(allyl methacrylate)‐co‐(hydroxyethyl methacrylate) has been evaluated as a high‐sensitivity, high‐resolution, high temperature‐resistant negative electron resist. The effects of molecular weight and polydispersity of the copolymer on its lithographic performance as an E‐beam resist were studied. The sensitivity of the copolymer is nearly constant in the weight‐average‐molecular‐weight range of 50,000 to 75,000, and it gradually decreases with a decrease in molecular weight. As expected for a negative resist, the resist contrast increases as the polydispersity is decreased. The sensitivity curve shape of the polymer was independent of the prebake temperature, which varied from 70 to 110°C, and of the various developers used. The exposed coating requires vacuum curing for image optimization. Resolution of 0.5 μm line/space pairs was obtained from a 0.6 μm thick resist by exposing the resist to 10 keV electrons with either a raster‐scan‐type or vector‐scan‐type electron‐beam exposure machine. After postbaking at 170°C, the resist had good resistance to both chemical etching and dry etching. The plasma‐etch resistance was about twice that of PMMA.