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Azide‐phenolic resin UV resist (MRL) for microlithography
Author(s) -
Iwayanagi Takao,
Hashimoto Michiaki,
ogaki Saburo,
Koibuchi Shigeru,
Makino Daisuke
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231704
Subject(s) - photoresist , resist , materials science , polymer , aqueous solution , irradiation , photochemistry , high resolution , polymer chemistry , nanotechnology , composite material , chemistry , organic chemistry , physics , remote sensing , layer (electronics) , geology , nuclear physics
Poly(4‐vinylphenol) sensitized by an aromatic monoazide compound (4‐azidochalcone), called MRL ( M icro R esist for L onger wavelengths), has been prepared and evaluated as a negative UV resist. The resist is sensitive to radiation in the 300 to 400 nm region. The sensitivity of MRL is comparable to that of a positive quinonediazide photoresist under exposure to unfiltered light from a high pressure Hg lamp. An aqueous base developer removes the unexposed areas of MRL with no evidence of swelling of the exposed areas, indicating its high resolution capability. The main products in the exposure of MRL films are found to be primary and secondary amines. It is concluded that the formation of secondary amines attached to the polymer chain is responsible for the insolubilization of the exposed MRL in the base developer.