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The feasibility of electrical monitoring of resin cure with the charge‐flow transistor
Author(s) -
Senturia Stephen D.,
Sheppard Norman F.,
Poh Soon Y.,
Appelman Howard R.
Publication year - 1981
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760210210
Subject(s) - materials science , transistor , dielectric , optoelectronics , signal (programming language) , field effect transistor , mosfet , flow (mathematics) , voltage , electrical engineering , computer science , mechanics , physics , programming language , engineering
A new technique for the electrical monitoring of polymerization reactions such as resin cure is described. The technique is based on the charge‐flow transistor, which resembles a conventional metal‐oxide‐semiconductor field‐effect transistor (MOSFET), but with a portion of the metal gate replaced by the resin under study. Electrical signals obtained from several resins undergoing cure are presented, along with an electrical circuit model that can account for the principal features of these signals. The dramatic change in signal shape during cure can be related to corresponding changes in both the real and imaginary parts of the dielectric constant.

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