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Electron sensitive negative resists of vinylaromatic polymers
Author(s) -
Jagt J. C.,
Sevriens A. P. G.
Publication year - 1980
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760201609
Subject(s) - resist , polystyrene , materials science , polymer , electron , sensitivity (control systems) , polymer chemistry , nanotechnology , composite material , physics , layer (electronics) , quantum mechanics , electronic engineering , engineering
Electron resist properties of three vinylaromatic polymers, polystyrene, polyvinylcarbazole and poly(3‐bromo‐N‐vinylcarbazole) have been examined. Polystyrene and polyvinylcarbazole are high contrast resists of high dry etch resistance, but for adequate sensitivity ( D g 0.5⩽ ca. 10 μC/cm 2 at 25 kV) high molecular weights are needed ( M w ⩾ 10 6 ). Poly(3‐brotno‐N‐vinylearbazole) has a much higher sensitivity ( D g 0.5= ca. 2 μC/cm 2 ) than the unsubstituted polymer. The sensitivity of polystyrene and polyvinylcarbazole is increased appreciably by addition of organic bisazides as crosslinking agents, e.g. a sensitivity increase of almost an order of magnitude was found upon addition of 3% 4, 4′‐diazidostilbene to polystyrene, high contrast being maintained.