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Factors affecting the sensitivity of e‐beam resists
Author(s) -
Brewer Terry L.
Publication year - 1974
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760140714
Subject(s) - resist , materials science , epoxy , polymer , cathode ray , sensitivity (control systems) , electron , electron beam lithography , composite material , nanotechnology , physics , layer (electronics) , quantum mechanics , electronic engineering , engineering
In order to determine the effects of chemical structure on electron beam resist sensitivities, a series of polymers with different reactive components and additives has been investigated. The results, based on a larger number of exposures varying over five orders of magnitude, point out several interesting facts. The data indicate that the sensitivity of negative resists is not a linear function of molecular weight as previously supposed. Also, the negative electron resists tend to be more sensitive and cover a broader range of sensitivities than positive resists. The results further show that olefin and epoxy groups greatly enhance the crosslinking rate of these exposed polymers. However, additives, which are good energy transferring type sensitizers, have little effect on resist sensitivity. This last result is not surprising considering the nonselectivity of the exciting electrons.