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Flash exposure system for thin photoresist films
Author(s) -
O'Hora D. E.,
Beuschel W. F.
Publication year - 1974
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760140708
Subject(s) - photoresist , materials science , flash (photography) , optoelectronics , optics , enhanced data rates for gsm evolution , resist , nanotechnology , computer science , layer (electronics) , telecommunications , physics
The formation of an image in a photoresist during photolithographic processing requires the exposure of the photoresist through a mask to a light source in the spectral region to which the photoresist is sensitive. The functional advantage of the flash exposure of photoresist is presented, which includes the elimination of oxygen effects, the reduction of diffraction and standing wave effects, and the enhancement of pattern‐edge acuity. The effects of both broad and narrow band sources are also shown with emphasis on proximity printing techniques. Finally, the optical, electrical and physical design parameters for a practical flash exposure system are discussed.