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Effects of B 2 O 3 addition on structural and dielectric properties of PVDF
Author(s) -
Kadiroglu Umut,
Abaci Ufuk,
Yuksel Guney H.
Publication year - 2014
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.23807
Subject(s) - dielectric , materials science , amorphous solid , doping , composite material , dipole , deformation (meteorology) , polymer , dielectric loss , crystallography , organic chemistry , chemistry , optoelectronics
α ‐Crystalline form of PVDF doped with Boron oxide (B 2 O 3) composite films were produced between 0.2 and 1% weight ratio via the casting procedure. This low‐level doping rate did not change the crystalline structure of PVDF; however, they increased the lower and upper glass transition temperatures, which are associated with the amorphous ratio of polymer. This increment was found to be the highest for the sample 0.8% B 2 O 3 ‐doped PVDF as 25 and 9.7%, respectively. Because of the low specific volume occurred in the 0.8% doped sample, B 2 O 3 molecules are closer to the side groups of PVDF and, therefore, the coordination bonds also occurred according to the interaction between them and as a result of this interaction a geometric deformation occurred on the morphology of B 2 O 3 . In consequence of this deformation, morphology of B 2 O 3 gained net dipole moment and provided a contribution to the dipole moment density of the structure. Hence, higher dielectric constant values obtained than that of pure PVDF. At 1 kHz and 300 K, the real dielectric constant increased by 236% compared to that of pure PVDF. It was shown experimentally by the 0.8% doping level of B 2 O 3 that decreasing porous and gap structure resulted a high dielectric constant. POLYM. ENG. SCI., 54:2536–2543, 2014. © 2013 Society of Plastics Engineers