Electrical characterization of the boron trifluoride doped poly(3‐aminoacetophenone)/p‐Si junction | Zendy

Yakuphanoglu Fahrettin | Zendy; Şenkal B. Filiz | Zendy

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Electrical characterization of the boron trifluoride doped poly(3‐aminoacetophenone)/p‐Si junction

Author(s) -

Yakuphanoglu Fahrettin,

Şenkal B. Filiz

Publication year - 2010

Publication title -

polymer engineering and science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.503

H-Index - 111

eISSN - 1548-2634

pISSN - 0032-3888

DOI - 10.1002/pen.21614

Subject(s) - materials science , doping , equivalent series resistance , boron trifluoride , diode , dielectric spectroscopy , schottky barrier , schottky diode , boron , semiconductor , analytical chemistry (journal) , p–n junction , optoelectronics , voltage , electrical engineering , electrode , chemistry , electrochemistry , organic chemistry , engineering , catalysis

Electrical and interface state properties of the borontrifluoride doped poly(3‐aminoacetophenone)/p‐Si junction have been investigated by current‐voltage and impedance spectroscopy methods. Al/p‐Si/P 3 APBF 3 /Aldiode indicates a nonideal behavior with electrical parameters ( n = 3.53, ϕ B = 0.82 eV, and R s = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p‐Si/P 3 APBF 3 /Aldiode is higher than that of the conventional Al/p‐Si (ϕ B = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05× 10 12 eV −1 cm −2 . It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3‐aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 2010. © 2009 Society of Plastics Engineers

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