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Electrical characterization of the boron trifluoride doped poly(3‐aminoacetophenone)/p‐Si junction
Author(s) -
Yakuphanoglu Fahrettin,
Şenkal B. Filiz
Publication year - 2010
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.21614
Subject(s) - materials science , doping , equivalent series resistance , boron trifluoride , diode , dielectric spectroscopy , schottky barrier , schottky diode , boron , semiconductor , analytical chemistry (journal) , p–n junction , optoelectronics , voltage , electrical engineering , electrode , chemistry , electrochemistry , organic chemistry , engineering , catalysis
Electrical and interface state properties of the borontrifluoride doped poly(3‐aminoacetophenone)/p‐Si junction have been investigated by current‐voltage and impedance spectroscopy methods. Al/p‐Si/P 3 APBF 3 /Aldiode indicates a nonideal behavior with electrical parameters ( n = 3.53, ϕ B = 0.82 eV, and R s = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p‐Si/P 3 APBF 3 /Aldiode is higher than that of the conventional Al/p‐Si (ϕ B = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05× 10 12 eV −1 cm −2 . It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3‐aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 2010. © 2009 Society of Plastics Engineers