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Two‐component photoresists containing thermally crosslinkable photoacid generators
Author(s) -
Moon SeongYun,
Chung ChanMoon
Publication year - 2000
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.11252
Subject(s) - photoresist , tetramethylammonium hydroxide , aqueous solution , materials science , polymer chemistry , vinyl ether , polymer , trifluoromethanesulfonate , ether , alkoxy group , methacrylate , nuclear chemistry , copolymer , alkyl , chemistry , organic chemistry , catalysis , nanotechnology , layer (electronics) , composite material
Bis{4‐[2′‐(vinyloxy)ethoxy]phenyl}‐4‐methoxyphenylsulfonium triflate (TPS‐2VE‐Tf) and tris{4‐[2′‐(vinyloxy)ethoxy]phenyl}sulfonium triflate (TPS‐3VE‐Tf) were synthesized as thermally crosslinkable photoacid generators (PAGs) and used in a two‐component chemically amplified photoresist system. The photoresist films formulated with poly( p ‐hydroxystyrene) (PHS) as a binder polymer and a thermally crosslinkable PAG are insolubilized in aqueous base by prebaking due to the thermal crosslinking reaction between PHS and the PAG. The insolubilization temperature of the resists and conversion of vinyl ether groups are greatly influenced by the PAG concentration and prebaking temperature, respectively. Upon exposure to deep UV and subsequent postexposure bake, the crosslinks are cleaved by photogenerated acid, leading to effective solubilization of the exposed areas. Photoresists containing TPS‐2VE‐Tf and TPS‐3VE‐Tf exhibited sensitivities of 12 and 45 mJ/cm 2 , respectively. Positive‐tone images were obtained using a 2.38 wt% aqueous tetramethylammonium hydroxide developer.