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New composites with high thermal conductivity and low dielectric constant for microelectronic packaging
Author(s) -
Ling Wei,
Gu Aijuan,
Liang Guozheng,
Yuan Li
Publication year - 2010
Publication title -
polymer composites
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.577
H-Index - 82
eISSN - 1548-0569
pISSN - 0272-8397
DOI - 10.1002/pc.20805
Subject(s) - materials science , composite material , dielectric , thermal conductivity , microelectronics , composite number , nitride , dielectric loss , high κ dielectric , ternary operation , optoelectronics , layer (electronics) , computer science , programming language
Three composites based on cyanate (CE) resin, aluminum nitride (AlN), surface‐treated aluminum nitride [AlN(KH560)], and silicon dioxide (SiO 2 ) for microelectronic packaging, coded as AlN/CE, AlN(KH560)‐SiO 2 (KH560)/CE, and AlN‐SiO 2 /CE composite, respectively, were developed for the first time. The thermal conductivity and dielectric constant of all composites were investigated in detail. Results show that properties of fillers in composites have great influence on the thermal conductivity and dielectric constant of composites. Surface treatment of fillers is beneficial to increase the thermal conductivity or reduce dielectric constant of the composites. Comparing with binary composite, when the filler content is high, ternary composites possess lower thermal conductivity and dielectric constant. The reasons leading to these outcomes are discussed intensively. POLYM. COMPOS., 2010. © 2009 Society of Plastics Engineers