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Electrical characterization of organic based transistors: stability issues
Author(s) -
Gomes Henrique L.,
Stallinga Peter,
Dinelli Franco,
Murgia Mauro,
Biscarini Fabio,
de Leeuw Dago M.,
Muccini M.,
Müllen K.
Publication year - 2005
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.558
Subject(s) - materials science , thin film transistor , metastability , transistor , threshold voltage , optoelectronics , kinetics , semiconductor , formalism (music) , amorphous solid , organic semiconductor , voltage , nanotechnology , crystallography , electrical engineering , chemistry , physics , art , musical , engineering , layer (electronics) , quantum mechanics , visual arts , organic chemistry
An investigation into the stability of metal insulator semiconductor (MIS) transistors based on α ‐sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched‐hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous–silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature‐dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T ≈220 K and the other at T ≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and α ‐sexithiophene deposition parameters. Copyright © 2005 John Wiley & Sons, Ltd.