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Synthesis, characterization and memory properties of novel organosoluble polyimides
Author(s) -
Ren Decai,
Li Hongling,
Zhu Yu,
Bai Xuduo
Publication year - 2016
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.3844
Subject(s) - materials science , biphenyl , glass transition , polyimide , polymer , non volatile memory , coating , indium tin oxide , flash memory , oxide , characterization (materials science) , polymer chemistry , chemical engineering , layer (electronics) , composite material , optoelectronics , nanotechnology , organic chemistry , chemistry , computer science , engineering , metallurgy , operating system
Two novel series of aromatic polyimides were prepared from 2,2′‐bis(4‐amino‐3‐trifluoromethylthylphenoxy) biphenyl, 2,2′‐bis(4‐amino‐3‐methoxyphenoxy)biphenyl with 3,3′,4,4′‐benzophenonetetracarboxylic dianhydride (BTDA), 3,3′,4,4′‐diphenylsulfonetetracarboxylic dianhydride (DSDA) via a one‐step procedure. The resulting polymers were fully characterized, and they exhibited excellent organosolubility. These polyimides are thermally stable with 5% weight loss over 430°C, and glass transition temperatures of the polyimides were found to be 225–262°C. Resistive switching devices with the configuration of Al/polymer/indium‐tin oxide were constructed from these polyimides by using conventional solution coating process. Devices with all polyimides exhibited nonvolatile and rewritable flash type memory characteristics with turn‐on voltage at −1.1 to −2.8 V. The ON/OFF current ratio of these devices was larger than 10 4 , and the retention times can be as long as 10 4 s. The theoretical simulation based on the density functional theory suggested that greater distinct charge separation between the ground and charge transfer states led to a highly stable memory behavior. Copyright © 2016 John Wiley & Sons, Ltd.