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Progress in the chemistry of organosilicon resists
Author(s) -
Gozdz Antoni S.
Publication year - 1994
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1994.220050110
Subject(s) - organosilicon , resist , materials science , polymer science , nanotechnology , organic chemistry , polymer chemistry , chemistry , layer (electronics)
Abstract Recent developments in the chemistry of organosilicon polymers for use as oxygen plasma‐resistant imaging materials in microlithography are reviewed. Various classes of resists, grouped according to molecular structure, are described with special emphasis on properties critical in microlithographic applications. In addition, several silylation schemes involving selective silylation of a non‐silicon‐containing resist material following patternwise exposure to actinic radiation are also described.