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Functionalized polymers for high‐resolution photolithography
Author(s) -
Sebald Michael,
Ahne Hellmut,
Leuschner Rainer,
Sezi Recai
Publication year - 1994
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1994.220050106
Subject(s) - resist , materials science , photolithography , methacrylic acid , polymer , copolymer , excimer laser , monomer , maleic anhydride , polymerization , polymer chemistry , photoresist , lithography , nanotechnology , laser , optoelectronics , optics , composite material , physics , layer (electronics)
Polymers obtained by radical polymerization of maleic anhydride with different monomers are used in bilayer photoresists for the CARL (Chemical Amplification of Resist Lines) process. Aqueous‐based silylation of resist patterns with bisaminopropyl‐oligodimethylsiloxane enhances oxygen–plasma etch resistance and creates widened structures. Thus, the resolution capability of optical exposure tools can be used to the full extent and even structures beyond the optical resolution limit become accessible. Copolymerization of maleic anhydride with tBOC‐maleimide or methacrylic acid t‐butylester yields polymers for highly sensitive acid‐catalyzed deep UV resists. With the use of a KrF excimer‐laser stepper 0.25 μm structures are resolved.