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A mechanism for the electron beam lithography of solvent‐soluble photosensitive polyimides
Author(s) -
Yamashita Takashi,
Kudo Takafumi,
Horie Kazuyuki
Publication year - 1993
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1993.220040404
Subject(s) - materials science , solvent , photochemistry , polymer , benzophenone , excited state , photoresist , moiety , polyimide , polymer chemistry , nanotechnology , chemistry , organic chemistry , atomic physics , layer (electronics) , composite material , physics
Solvent‐soluble and intrinsically photosensitive polyimides were prepared, and their electron beam reaction was investigated. Negative tone patterns were formed by the electron beam irradiation of PI(BTDA/DEDPM) and PI(BEDA/DEDPM). The mechanism for the pattern formation of PI(BTDA/DEDPM) was determined from transient absorption measurements, changes in the molecular weights, and IR spectrum measurements to be crosslinking via hydrogen abstraction by the triplet excited state benzophenone moiety. For the case of PI(BEDA/DEDPM), the pattern was formed by insolubilization due to chemical change in the polymer. These reactions are found to be so inhomogeneous that insolubilization of the polymer occurs at an early stage of gelation.