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γ radiolysis of neat 2‐phenylheptamethyltrisilane as a model of polysilastyrene
Author(s) -
Nakao Ren,
Oka Kunio,
Dohmaru Takaaki,
Abe Yasuo,
Horii Toyokazu,
Kitao Teijiro
Publication year - 1993
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1993.220040105
Subject(s) - radiolysis , extrusion , irradiation , hydrogen , trimethylsilyl , materials science , chain scission , hydrogen bond , photochemistry , radical , organic chemistry , chemistry , molecule , polymer , physics , nuclear physics , composite material , metallurgy
2‐Phenylheptamethyltrisilane as a model compound of polysilastyrene was irradiated at a high dose (1440 kGy) of γ‐rays without any additive. The trisilane was found to be resistant to γ‐rays, while it gave small amounts of Me 6 Si 2 , Me 3 SiSiMe 2 Ph, Me 3 SiH, Me 3 SiSiHMePh and (Me 3 Si) 2 SiMeC 6 H 4 SiMe 3 . These products can be interpreted as being due to a chain contraction of the trisilane with the extrusion of methylphenylsilylene, a methyl migration with the extrusion of dimethylsilylene, a scission of an Si–Si bond due to an attack by hydrogen atoms, and a substitution of a hydrogen atom on the phenyl group by a trimethylsilyl radical. The same reactions, except the chain contraction, are observed in the cases of pentamethylphenyldisilane and 1,2‐diphenyltetramethyldisilane. On the basis of the data obtained, the chemical behavior of polysilastyrene during the irradiation is discussed.