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Acid generation and deprotecting reaction by diphenyliodonium 9,10‐dimethoxyanthracene‐2‐sulfonate in a novolak positive photoresist based on chemical amplification
Author(s) -
Naitoh Kazuhiko,
Yamaoka Tsuguo,
Umehara Akira
Publication year - 1992
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1992.220030304
Subject(s) - photoresist , resist , materials science , sulfonate , quantum yield , yield (engineering) , catalysis , photochemistry , polymer chemistry , fluorescence , chemistry , nanotechnology , organic chemistry , optics , physics , layer (electronics) , metallurgy , sodium
In a positive photoresist composed of diphenyliodonium 9,10‐dimethoxyanthracene‐2‐sulfonate as a novel photoacid generator, bisphenol A protected with tertbutoxycarbonyl group as a dissolution inhibitor, and a novolak resist matrix, the efficiency of photo‐acid generation and deprotective reaction were investigated by means of UV‐visible and IR spectroscopies. The quantitative measurement of photogenerated acid by using the acid‐sensitive dye exhibited 0.18 as the quantum yield of acid generation in novolak resin film. The lithographic evaluation of this system as a chemically amplified resist was studied. The catalytic chain length for the acid‐catalyzed deprotection step was determined as about 100 when 10 min post‐exposure bake (PEB) at 80°C was given. The sensitivity and the resolution as a positive resist are 180 mJ/cm 2 and higher than 1 μm, respectively under the PEB conditions mentioned above.