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Positive working photoresists sensitive to visible light, II: poly{2‐arylpropyl‐2 and bis ( p ‐methoxyphenyl)methyl methacrylates}
Author(s) -
Ohe Yasushi,
Ichimura Kunihiro
Publication year - 1992
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1992.220030203
Subject(s) - methacrylate , copolymer , methyl methacrylate , hexafluorophosphate , materials science , polymer chemistry , polymer , cleavage (geology) , methanol , photochemistry , resist , chemistry , catalysis , organic chemistry , nanotechnology , ionic liquid , layer (electronics) , fracture (geology) , composite material
Acid‐labile polymers of methacrylates of 2‐(p‐substituted phenyl)propanol‐2 and bis(p‐methoxyphenyl)methanol were evaluated as visible light sensitive positive‐type resists. The chemistry to form images is based on the cleavage of esters catalysed by an acid generated by photodecomposition of diphenyliodonium hexafluorophosphate sensitized by 2‐benzoyl‐3‐(p‐dimethylaminophenyl)‐2‐propenenitrile. A copolymer of bis(p‐methoxyphenyl)methyl methacrylate‐phenyl methacrylate exhibited a high photospeed upon exposure to 488 nm light when coupled with the iodonium salt and the dye, and was applicable to relief holography.