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A low dielectric constant polyimide/polyoxometalate composite
Author(s) -
Tan Lin,
Liu Shumei,
Zeng Fang,
Zhang Shukun,
Zhao Jianqing,
Yu Yine
Publication year - 2011
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1517
Subject(s) - polyoxometalate , polyimide , materials science , composite number , dielectric , pyromellitic dianhydride , bpda , polymer , polymer chemistry , chemical engineering , composite material , organic chemistry , chemistry , catalysis , layer (electronics) , optoelectronics , engineering
A silane‐modified mono‐lacunary Keggin‐type polyoxometalate (POM), (Bu 4 N) 4 [SiW 11 O 39 {(CH 2 CHSi) 2 O}] (SiW 11 CHCH 2 ), was obtained by reaction of vinyltrimethoxysilane with K 8 (SiW 11 O 39 ) in acidic MeCN/H 2 O mixed solutions. Then, the modified polyoxometalate was physically blended with the pyromellitic dianhydride (PMDA)‐4,4′‐oxydianiline (ODA) poly(amic acid) and the blends were thermally imidized to form polyimide/ polyoxometalate composites. The X‐ray diffraction (XRD) analysis indicates that the polyoxometalate clusters cannot form crystalline structures in the composite, suggesting that the blending leads to improved compatibility between the polymer matrix and the modified polyoxometalate. The EDS (W‐mapping) studies on the composite films reveal that the polyoxometalate clusters are well dispersed in the polyimide matrix. The physical incorporation of modified POM into polyimide remarkably reduced the dielectric constant of the latter from 3.29 to 2.05 when 20 wt% of SiW 11 CHCH 2 was used. Besides, the addition of the modified POM into polyimide increased the storage modulus of polyimide without severely affecting its thermal properties. Copyright © 2009 John Wiley & Sons, Ltd.