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A study of the behavior of charge carriers in an organic non‐volatile memory device with a thin metal layer between polymers
Author(s) -
Choi JinSik,
Cho Young Suk,
Yook Ju Young,
Suh Dong Hack
Publication year - 2010
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1500
Subject(s) - materials science , bistability , layer (electronics) , polymer , electrode , charge carrier , thin film , thermal conduction , metal , optoelectronics , conductance , charge (physics) , active layer , nanotechnology , chemical engineering , chemical physics , thin film transistor , composite material , condensed matter physics , chemistry , physics , quantum mechanics , engineering , metallurgy
The behaviors of charge carriers were investigated to understand the reversible bistability in the polymer device with an embedded thin metal layer between the metal electrodes. The reversible bistability was sensitive to the condition of the embedded thin metal layer that was prepared by depositing 5 nm Al by 0.8 Å/sec. The device was controlled by the charge and the discharge in the effective trap sites of the embedded Al layer. Poly(N‐vinylcarbazole) as an organic active material merely conducted the charge transport function. The effective trap sites were contributed by the change of the reversible conductance and also preferred to be in a high conduction state. They took relatively low energy states easily as the device was affected by thermal stimulation at 150°C. The modification of the embedded Al layer improved its performances. Copyright © 2009 John Wiley & Sons, Ltd.