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A non‐volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers
Author(s) -
Yonekuta Yasunori,
Honda Kenji,
Nishide Hiroyuki
Publication year - 2008
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/pat.1006
Subject(s) - bistability , materials science , nitroxide mediated radical polymerization , salt (chemistry) , conductivity , layer (electronics) , methacrylate , non volatile memory , chemical engineering , polymer chemistry , methyl methacrylate , polymer , optoelectronics , composite material , organic chemistry , radical polymerization , polymerization , chemistry , engineering
A non‐volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6‐tetramethylpiperidine‐1‐oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p‐dopable material, while the silver salt‐dispersed PMMA layer acted as an n‐dopable material. The ON–OFF ratio between low‐conductivity and high‐conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 10 3 sec. The device was characterized by excellent rewritability. Copyright © 2007 John Wiley & Sons, Ltd.