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Electron energy level calculations for semiconductor nanostructures
Author(s) -
Betcke Marta M.,
Voss Heinrich
Publication year - 2007
Publication title -
pamm
Language(s) - English
Resource type - Journals
ISSN - 1617-7061
DOI - 10.1002/pamm.200700589
Subject(s) - wetting layer , quantum dot , wetting , hamiltonian (control theory) , effective mass (spring–mass system) , electron , semiconductor , nanostructure , condensed matter physics , electronic structure , electronic band structure , semiconductor nanostructures , materials science , physics , nanotechnology , optoelectronics , quantum mechanics , mathematics , composite material , mathematical optimization
Although self‐assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard‐wall 3D confinement potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)