Electron energy level calculations for semiconductor nanostructures | Zendy

Betcke Marta M. | Zendy; Voss Heinrich | Zendy

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Electron energy level calculations for semiconductor nanostructures

Author(s) -

Betcke Marta M.,

Voss Heinrich

Publication year - 2007

Publication title -

pamm

Language(s) - English

Resource type - Journals

ISSN - 1617-7061

DOI - 10.1002/pamm.200700589

Subject(s) - wetting layer , quantum dot , wetting , hamiltonian (control theory) , effective mass (spring–mass system) , electron , semiconductor , nanostructure , condensed matter physics , electronic structure , electronic band structure , semiconductor nanostructures , materials science , physics , nanotechnology , optoelectronics , quantum mechanics , mathematics , composite material , mathematical optimization

Although self‐assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard‐wall 3D confinement potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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