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Propagation of high intensity light in semiconductors
Author(s) -
Gonzalez L. P.,
Guha S.,
Sheng Q.
Publication year - 2007
Publication title -
pamm
Language(s) - English
Resource type - Journals
ISSN - 1617-7061
DOI - 10.1002/pamm.200700294
Subject(s) - semiconductor , irradiance , optics , light intensity , optoelectronics , absorption (acoustics) , materials science , laser , photon , transmission (telecommunications) , photon energy , band gap , physics , telecommunications , computer science
For photons of energy below the bandgap energy, semiconductors exhibit high transparency and low irradiance light passes freely through the medium. However, for high irradiances of light, as from a laser, the transmission through the semiconductor becomes nonlinear. As the irradiance of the incident light increases, the transmission through the semiconductor decreases through nonlinear absorption as well as from the generation of free carriers during the laser pulse. The propagation of light through this irradiance dependent medium can be described by a set of coupled, inhomogeneous, partial differential equations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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