Open AccessA 32×32 photon counting camera
Author(s) -
Tisa Simone,
Bertone Nick,
Zappa Franco
Publication year - 2011
Publication title -
optik & photonik
Language(s) - English
Resource type - Journals
eISSN - 2191-1975
pISSN - 1863-1460
DOI - 10.1002/opph.201190329
Subject(s) - detector , diode , photon counting , single photon avalanche diode , optoelectronics , avalanche photodiode , electronics , avalanche diode , optics , silicon photomultiplier , physics , photon , silicon , electrical engineering , engineering , breakdown voltage , voltage , scintillator , quantum mechanics
Silicon photon counting detectors have been in production for many years but until recently they were single pixel detectors that required a custom and specialized fabrication process. In the last couple of years, CMOS compatible processes were developed to produce silicon photon counting detectors with very good performances. Usually, in single photon avalanche diodes (SPADs), the electronics for quenching the diode and the electronics for picking‐up the avalanche ignition are separate from the SPAD itself. Commercial detectors of such a design can have, for example, 49 % detection efficacy at 550 nm, dark counts of 1/s for an active area of 20 μm in diameter, and 30 ps timing resolution.