Open AccessBlue Laser diodes
Author(s) -
Lutgen Stephan,
Schmitt Michael
Publication year - 2009
Publication title -
optik & photonik
Language(s) - English
Resource type - Journals
eISSN - 2191-1975
pISSN - 1863-1460
DOI - 10.1002/opph.201190024
Subject(s) - laser , optoelectronics , materials science , blue laser , diode , wavelength , metalorganic vapour phase epitaxy , quantum well , optics , laser diode , layer (electronics) , physics , nanotechnology , epitaxy
The story of GaNlasers started in 1995 with first demonstration of laser operation in the near UV. In 2000 the commercialization started with laser for optical data storage and Bluray disc with emission wavelength of 405 nm. It took another several years to come from a 405 nm near UV emission spectrum to today's 450 nm. The technological challenges for true blue 450 nm GaN laser diodes are based on the MOVPEgrowth of In—rich InGaNQuantum wells with high material quality and optimized AlGaN wave guiding layer designs with adopted strain management. With only 3.2 mm height an optimized TO38 Icut assembly meets the demands for an ultra compact package in embedded laser scanning projection systems.