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Mixed silicon carbide clusters studied by laser ablation Fourier transform ICR mass spectrometry
Author(s) -
Greenwood Paul F.,
Willett Gary D.,
Wilson Michael A.
Publication year - 1993
Publication title -
organic mass spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.475
H-Index - 121
eISSN - 1096-9888
pISSN - 0030-493X
DOI - 10.1002/oms.1210280804
Subject(s) - silicon carbide , mass spectrometry , laser ablation , ablation , materials science , fourier transform ion cyclotron resonance , analytical chemistry (journal) , fourier transform , fourier transform infrared spectroscopy , laser , chemistry , chromatography , optics , physics , aerospace engineering , composite material , engineering , quantum mechanics
Ions produced by the 1064 nm Nd:YAG laser ablation of various Si–C samples include mixed silicon carbon (Si x C y ) cluster ions of low molecular mass. Unique Si x C y cluster ion distributions are observed. A charge state effect for Si x C y clusters is evident from differences between the respectively charged distributions. This may be accounted for by either differing energetics and/or differing formation mechanisms for positive and negative Si x C y cluster ions. Several specific Si x C y clusters of probable high stability consistently dominate the mass spectra. The chemistry of the more abundant Si x C y ions was probed by collision‐induced dissociation and ion–molecule reactivity experiments. Similar Si x C y + ˙ dissociation results in the common loss of an Si ion. Parent Si x C y ion and small neutral reagent reactants give rise to oxidation, addition and exchange reactions.

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