Open AccessHigh‐performance P(VDF‐TrFE)/BaTiO 3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications
Author(s) -
Valiyaneerilakkal Uvais,
Cherumannil Karumuthil Subash,
Singh Kulwant,
Bhanuprakash Loksani,
Komaragiri Rama,
Varghese Soney
Publication year - 2021
Publication title -
nano select
Language(s) - English
Resource type - Journals
ISSN - 2688-4011
DOI - 10.1002/nano.202100081
Subject(s) - materials science , ferroelectricity , dielectric , nanocomposite , barium titanate , field effect transistor , optoelectronics , transistor , threshold voltage , nanotechnology , voltage , electrical engineering , engineering
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO 3 ] polymer nanocomposite as dielectric layer, has been fabricated and characterized. P(VDF‐TrFE)/BaTiO 3 nanocomposite of 300 nm thin film over 10 nm SiO 2 was used in the optimized fabrication process sequence of FeFET. The addition of BaTiO 3 nanoparticle to the P(VDF‐TrFE) copolymer has enhanced the ferroelectric property with an observed 2 V difference in memory window. The effect of temperature and frequency on these memory window characteristics were observed to optimized the stack thickness for an ideal FeCAP (ferroelectric capacitor). Drain current–drain voltage (I D ‐V D ) characteristics of P(VDF‐TrFE)/BaTiO 3 FeFET shows significant variation in I D with pinch of voltage around 1 V for wide range of gate voltage (V G ). I ON /I OFF ratio of FeFET using P(VDF‐TrFE)/BaTiO 3 was found to be 35, which was higher than the ratio of FeFET fabricated using P(VDF‐TrFE) copolymer (4.4). I D ‐V G characteristics of both the FETs clearly indicate a lower threshold voltage (0.83 V) for P(VDF‐TrFE)/BaTiO 3 FET, which is almost three times lesser than threshold voltage of a P(VDF‐TrFE) FET (2.5 V).