Open AccessNanoparticle ink‐based silicon Schottky diodes operating up to 2.84 GHz
Author(s) -
Kühnel Laura,
Neumann Kevin,
Neises Julian,
Langer Fabian,
Erni Daniel,
Schmechel Roland,
Benson Niels
Publication year - 2020
Publication title -
nano select
Language(s) - English
Resource type - Journals
ISSN - 2688-4011
DOI - 10.1002/nano.202000102
Subject(s) - materials science , optoelectronics , inkwell , schottky diode , electronics , silicon , diode , semiconductor , schottky barrier , nanoparticle , nanotechnology , electrical engineering , engineering , composite material
Today's printed, flexible electronics are often limited by the electronic performance enabled by the used functional semiconductor ink. Thin films from such inks typically exhibit a low charge carrier mobility, which inhibits high frequency device operation and limits their use for applications within the Internet‐of‐Things concept, such as wireless electronic tags and sensors. Our approach to overcome this issue is the use of printable silicon. The silicon is deposited using nanoparticle inks and is subsequently processed into self‐organized crystalline μ‐cone shaped structures using an excimer laser treatment. Due to the high crystallinity of the Si μ‐cones, they can be used for devices capable of high frequency operation. In this article, this is demonstrated on the example of a Schottky diode operating at switching speeds up to 2.84 GHz and thereby putting printable high frequency electronics within reach.