Microwave properties of traveling‐wave InGaAs/InGaAlAs quantum‐well optical waveguide modulators | Zendy

Mihailidi M. M. | Zendy; Zucker J. E. | Zendy; Feuer M. D. | Zendy; Khan M. N. | Zendy; Chang T. Y. | Zendy; Sauer N. J. | Zendy

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Microwave properties of traveling‐wave InGaAs/InGaAlAs quantum‐well optical waveguide modulators

Author(s) -

Mihailidi M. M.,

Zucker J. E.,

Feuer M. D.,

Khan M. N.,

Chang T. Y.,

Sauer N. J.

Publication year - 1995

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650100404

Subject(s) - microwave , optical modulator , coplanar waveguide , optoelectronics , waveguide , modulation (music) , materials science , refractive index , optics , quantum well , gallium arsenide , microstrip , physics , phase modulation , laser , quantum mechanics , phase noise , acoustics

We analyze and measure the electrical properties of a hybrid coplanar/ microstrip traveling‐wave optical modulator containing an InGaAs/InAlAs quantum‐well electron transfer structure. S‐parameter measurements to 20 GHz reveal the microwave refractive index and microwave loss as a function of waveguide geometry. These experiments allow us to project electro‐optical modulation bandwidths in excess of 40 GHz. © 1995 John Wiley & Sons, Inc.

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