Premium
Analysis and experimental demonstration of a very high isolation optoelectronic switch with p‐i‐n photodiode and GaAs mesfet transmission gate
Author(s) -
Liu Qing Z.,
MacDonald R. Ian
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650100207
Subject(s) - mesfet , photodiode , optoelectronics , transmission gate , microwave , materials science , bandwidth (computing) , isolation (microbiology) , transmission (telecommunications) , common gate , electrical engineering , transistor , engineering , voltage , field effect transistor , telecommunications , cmos , amplifier , microbiology and biotechnology , biology
An optoelectronic switch with very high isolation and bandwidth from dc to microwave frequency range is demonstrated both theoretically and experimentally. The switch consists of a p‐i‐n photodiode and a GaAs MESFET in a common gate configuration as a transmission gate. An analytical expression is derived to calculate the isolation level of the switch. Measured isolation levels of 70 dB at 300 KHz and 55 dB up to 1.0 GHz were obtained for the proposed optoelectronic switch. © 1995 John Wiley & Sons, Inc.