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100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators
Author(s) -
Meng C. C.,
Siao S. W.,
Fetterman H. R.,
Streit D. C.,
Block T. R.,
Saito Y.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650100103
Subject(s) - impatt diode , optoelectronics , gallium arsenide , power (physics) , materials science , epitaxy , electrical engineering , physics , engineering , diode , nanotechnology , layer (electronics) , quantum mechanics
Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.