100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators | Zendy

Meng C. C. | Zendy; Siao S. W. | Zendy; Fetterman H. R. | Zendy; Streit D. C. | Zendy; Block T. R. | Zendy; Saito Y. | Zendy

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100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators

Author(s) -

Meng C. C.,

Siao S. W.,

Fetterman H. R.,

Streit D. C.,

Block T. R.,

Saito Y.

Publication year - 1995

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650100103

Subject(s) - impatt diode , optoelectronics , gallium arsenide , power (physics) , materials science , epitaxy , electrical engineering , physics , engineering , diode , nanotechnology , layer (electronics) , quantum mechanics

Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.

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