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Sensitivity comparison of MSM‐HBT and p‐i‐n — HBT OEIC receivers
Author(s) -
Liu Qing Z.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650090511
Subject(s) - heterojunction bipolar transistor , sensitivity (control systems) , responsivity , optoelectronics , photodetector , materials science , heterojunction , gigabit , bipolar junction transistor , electrical engineering , physics , transistor , electronic engineering , voltage , optics , engineering
The sensitivity of heterojunction‐bipolar‐transistor‐ (HBT‐) based OEIC receivers with metal‐semiconductor metal photodetectors (MSM‐PD) or p‐i‐n photodetectors (p‐i‐n‐PD) are compared. With an accurate small‐signal circuit model of an InP/InGaAs HBT, it is shown that sensitivity of the p‐i‐n‐HBT receiver is higher than that of the MSM‐HBT receiver even though the high‐frequency equivalent input noise current density is higher for the former than the latter. However, the HBT receiver using MSM‐PD with light transparent conducting fingers would offer a potential sensitivity improvement of 0.5 dB over the p‐i‐n‐HBT receiver at 10 Gbit/s due to an increased responsivity of the MSM‐PD. © 1995 John Wiley & Sons, Inc.