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2.5D EM small‐signal analysis of mesfets and hemts taking into account the full device metallization geometry
Author(s) -
John A.,
Jansen R. H.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650090404
Subject(s) - mesfet , planar , monolithic microwave integrated circuit , optoelectronics , materials science , high electron mobility transistor , transistor , electronic engineering , electrical engineering , engineering , field effect transistor , computer science , voltage , amplifier , computer graphics (images) , cmos
The full‐wave electromagnetic (EM) spectral‐domain approach so far applied to predominantly planar (2.5D) passive MIC / MMIC structures has been extended to the rigorous EM treatment of active devices like MESFETs/HEMTs incorporating the full metallization geometry. The presented approach is verified with a 1 × 300‐μm GaAs MESFET application example. © 1995 John Wiley & Sons, Inc.