2.5D EM small‐signal analysis of mesfets and hemts taking into account the full device metallization geometry | Zendy

John A. | Zendy; Jansen R. H. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

2.5D EM small‐signal analysis of mesfets and hemts taking into account the full device metallization geometry

Author(s) -

John A.,

Jansen R. H.

Publication year - 1995

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650090404

Subject(s) - mesfet , planar , monolithic microwave integrated circuit , optoelectronics , materials science , high electron mobility transistor , transistor , electronic engineering , electrical engineering , engineering , field effect transistor , computer science , voltage , amplifier , computer graphics (images) , cmos

The full‐wave electromagnetic (EM) spectral‐domain approach so far applied to predominantly planar (2.5D) passive MIC / MMIC structures has been extended to the rigorous EM treatment of active devices like MESFETs/HEMTs incorporating the full metallization geometry. The presented approach is verified with a 1 × 300‐μm GaAs MESFET application example. © 1995 John Wiley & Sons, Inc.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research