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Analysis and design of a multichannel HEMT gate mixer
Author(s) -
Allam R.,
Kolanowski C.,
Théron D.,
Crosnier Y.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650090310
Subject(s) - high electron mobility transistor , transconductance , realization (probability) , electronic engineering , extremely high frequency , frequency mixer , electrical engineering , engineering , nonlinear system , optoelectronics , materials science , radio frequency , telecommunications , physics , transistor , mathematics , statistics , quantum mechanics , voltage
The analysis of the operation of a HEMT gate mixer is presented below. We study the effect of the HEMT nonlinearities on mixer performance by using the nonlinear model in CAD. In particular, the tailoring of an adequate transconductance profile is used to optimize mixer performance for millimeter‐wave realization. © 1995 John Wiley & Sons, Inc.