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Comparison between GaAs and AllnAs/GalnAs MSM PDs for microwave and millimeter‐wave applications using a two‐dimensional bipolar physical model
Author(s) -
Ashour I. S.,
Vilcot J. P.,
Harari J.,
Decoster D.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650090118
Subject(s) - microwave , extremely high frequency , optoelectronics , heterojunction , millimeter , materials science , electrode , cutoff frequency , gallium arsenide , quantum , physics , optics , quantum mechanics
Using a 2D bipolar physical model a comparison is made between GaAs and AllnAs/GaInAs MSM PD performance (cutoff frequency and quantum efficiency) as a function of the device parameters. This covers the applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also reported that for millimeter‐wave applications we can expect higher operating frequency using an AlInAs/GaInAs MSP PD, whereas we can expect higher quantum efficiency using a GaAs MSM PD. © 1995 John Wiley & Sons, Inc.