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A simple technique for the design of gaas mmic double side‐band modulators based on the gilbert cell
Author(s) -
Alonso José I.,
Sánchez Juan C.
Publication year - 1995
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650080212
Subject(s) - intermodulation , gilbert cell , wideband , monolithic microwave integrated circuit , mesfet , electrical engineering , amplifier , transistor , differential amplifier , optoelectronics , materials science , resistor , biasing , physics , cmos , electronic engineering , voltage , engineering , field effect transistor , noise figure
A theoretical analysis of the Gilbert cell has been performed in order to accomplish a simple design method that allows us to choose the gate width and the bias point of its MESFET transistors as well as its load resistor R L ; also, the frequency dependence on differential output voltage can be analyzed. A wideband (1‐4‐GHz) double side‐band (DSB) modulator has been designed and built using this method. This DSB modulator is comprised of an input differential amplifier, a Gilbert cell, and an output differential amplifier, and it has been implemented with the 0.5‐μm F20 process of GEC‐Marconi. A carrier rejection of 50 dB and a third‐order intermodulation rejection of 48 dB have been measured at 2 GHz. The dc power consumption of the Gilbert cell is 136 mW.