Optimization of a power pseudomorphic double heterojunction FET | Zendy

Gaquière C. | Zendy; Théron D. | Zendy; Bonte B. | Zendy; Crosnier Y. | Zendy

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Optimization of a power pseudomorphic double heterojunction FET

Author(s) -

Gaquière C.,

Théron D.,

Bonte B.,

Crosnier Y.

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650071817

Subject(s) - heterojunction , doping , optoelectronics , materials science , power (physics) , power density , simple (philosophy) , charge control , power semiconductor device , double heterostructure , electrical engineering , engineering , physics , voltage , semiconductor , philosophy , epistemology , battery (electricity) , quantum mechanics , semiconductor laser theory

In this article we report the optimization of a power double heterostructure pseudomorphic FET. A ID model is used for charge control calculation and a 2D simulation for breakdown analysis. These simple models have allowed us to determine the suitable doping densities and device structure for maximum current density and breakdown performances. The results have been applied to the design of a 0.3‐μm × 70‐μm device. At 33 GHz it delivers an output power density of 1 W/mm with 5.7‐dB linear gain and 38% power added efficiency. © 1994 John Wiley & Sons, Inc.

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