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Design procedure of a 30‐GHz HEMT hybrid gate mixer
Author(s) -
Kolanowski C.,
Allam R.,
Crosnier Y.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650071712
Subject(s) - high electron mobility transistor , intermodulation , electronic circuit , realization (probability) , electronic engineering , extremely high frequency , electrical engineering , engineering , materials science , telecommunications , transistor , amplifier , cmos , mathematics , statistics , voltage
This article reports on a hybrid HEMT gate mixer exhibiting 4 dB of conversion gain and a 15‐dBm third‐order intermodulation intercept point at 28.5 GHz. These excellent performances have been made possible by a special design procedure that allows us overcome the problems inherent in the realization of hybrid circuits in millimeter‐wave ranges particularly the parasitic effects of bonding. © 1994 John Wiley & Sons, Inc.