Design procedure of a 30‐GHz HEMT hybrid gate mixer | Zendy

Kolanowski C. | Zendy; Allam R. | Zendy; Crosnier Y. | Zendy

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Design procedure of a 30‐GHz HEMT hybrid gate mixer

Author(s) -

Kolanowski C.,

Allam R.,

Crosnier Y.

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650071712

Subject(s) - high electron mobility transistor , intermodulation , electronic circuit , realization (probability) , electronic engineering , extremely high frequency , electrical engineering , engineering , materials science , telecommunications , transistor , amplifier , cmos , mathematics , statistics , voltage

This article reports on a hybrid HEMT gate mixer exhibiting 4 dB of conversion gain and a 15‐dBm third‐order intermodulation intercept point at 28.5 GHz. These excellent performances have been made possible by a special design procedure that allows us overcome the problems inherent in the realization of hybrid circuits in millimeter‐wave ranges particularly the parasitic effects of bonding. © 1994 John Wiley & Sons, Inc.

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