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Power‐gain and f max equations based on the T equivalent circuit of high‐frequency bipolar transistors
Author(s) -
Seo Youngseok,
Kim Bumman
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650071614
Subject(s) - transconductance , bipolar junction transistor , capacitance , equivalent circuit , bipolar transistor biasing , power gain , electrical engineering , transistor , power (physics) , physics , materials science , engineering , voltage , cmos , amplifier , quantum mechanics , electrode
Analytical expressions for the maximum available power gain and f max of a high‐frequency bipolar transistor are derived from the simple T equivalent circuit model of bipolar transistors. These equations predict the power gain of the state‐of‐the‐art microwave bipolar transistor very well and show that f/ max and power gain are proportional to the transconductance and decrease as the resistance‐capacitance charging time and current gain delay time increase. © 1994 John Wiley & Sons, Inc.