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Ultrafast optoelectronic characterization of microwave semiconductor diodes
Author(s) -
Adomavičius R.,
Krotkus A.,
Zakarevičius R.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650071607
Subject(s) - microwave , optoelectronics , diode , ultrashort pulse , picosecond , semiconductor , materials science , integrator , voltage , semiconductor device , step recovery diode , characterization (materials science) , optics , electrical engineering , physics , computer science , engineering , schottky diode , nanotechnology , telecommunications , laser , layer (electronics)
Abstract Microwave semiconductor diodes are characterized on a picosecond time scale by means of an optoelectronic technique, in which the diode is biased with a variable‐duration high‐voltage pulse, while its output current is integrated with a box‐car integrator. Measured data on three different devices illustrate the technique. © 1994 John Wiley & Sons, Inc.