Ultrafast optoelectronic characterization of microwave semiconductor diodes | Zendy

Adomavičius R. | Zendy; Krotkus A. | Zendy; Zakarevičius R. | Zendy

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Ultrafast optoelectronic characterization of microwave semiconductor diodes

Author(s) -

Adomavičius R.,

Krotkus A.,

Zakarevičius R.

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650071607

Subject(s) - microwave , optoelectronics , diode , ultrashort pulse , picosecond , semiconductor , materials science , integrator , voltage , semiconductor device , step recovery diode , characterization (materials science) , optics , electrical engineering , physics , computer science , engineering , schottky diode , nanotechnology , telecommunications , laser , layer (electronics)

Microwave semiconductor diodes are characterized on a picosecond time scale by means of an optoelectronic technique, in which the diode is biased with a variable‐duration high‐voltage pulse, while its output current is integrated with a box‐car integrator. Measured data on three different devices illustrate the technique. © 1994 John Wiley & Sons, Inc.

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