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Power added efficiency and gain improvement in mesfet amplifiers using an active harmonic loading technique
Author(s) -
Ghannouchi F. M.,
Beauregard F.,
Kouki A. B.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650071313
Subject(s) - mesfet , amplifier , load pull , harmonic , active load , electrical engineering , power (physics) , power gain , transistor , power added efficiency , port (circuit theory) , electronic engineering , microwave , engineering , rf power amplifier , harmonic analysis , physics , field effect transistor , telecommunications , voltage , cmos , acoustics , quantum mechanics
A six‐port‐based multiharmonic load‐pull setup is used to characterize a medium‐power MESFET transistor for the design of microwave amplifiers. Complete load‐pull measurements at the fundamental (1.7 GHz) and the second harmonic (3.4 GHz) are obtained for two bias points in class A and AB operation. It is shown that the power gain and the power added efficiency can vary up 0.6 dB and 6%, respectively, as the phase of the second harmonic load is changed. © 1994 John Wiley & Sons, Inc.