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A simple model for the gaas hbt high‐frequency performance under optical illumination
Author(s) -
De Salles Alvaro A.,
Hackbart Anelise S.,
Spalding Luiz N.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070903
Subject(s) - heterojunction bipolar transistor , cutoff frequency , bipolar junction transistor , optoelectronics , photocurrent , simple (philosophy) , heterojunction , equivalent circuit , heterostructure emitter bipolar transistor , materials science , photovoltaic system , transistor , electronic engineering , electrical engineering , engineering , voltage , philosophy , epistemology
A simple theory and a model for the GaAs heterojunction bipolar transistor's (HBT's) high‐frequency performance under optical illumination are described. It is assumed that the major contribution to the photocurrent in the HBT is due to the photovoltaic effect in the base‐collector depletion region. Estimations using PSPICE circuit simulator show photoresponse cutoff frequencies of several tens of gigahertz when some HBT parameters are adequately designed. © 1994 John Wiley & Sons, Inc.