Comparison of InGaAs/InP photodetectors for microwave applications | Zendy

Peredo E. | Zendy; Decoster D. | Zendy; Gouy J. P. | Zendy; Vilcot J. P. | Zendy; Constant M. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Comparison of InGaAs/InP photodetectors for microwave applications

Author(s) -

Peredo E.,

Decoster D.,

Gouy J. P.,

Vilcot J. P.,

Constant M.

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650070713

Subject(s) - photodetector , optoelectronics , photodiode , microwave , materials science , indium phosphide , photoconductivity , diode , laser , semiconductor , gallium arsenide , detector , sensitivity (control systems) , wavelength , indium gallium arsenide , optics , electronic engineering , physics , telecommunications , engineering

The purpose of this article is to compare the microwave performance of three photodetector types, an InGaAs/InP p‐i‐n photodiode, an interdigitated InAlAs/InGaAs/InP metal‐semiconductor‐metal (MSM) photodiode, and an interdigitated InGaAs/InP photo‐conductor (PC). Static and dynamic characterizations have been carried out at 1.3‐μm wavelength using a directly modulated laser diode. Our experiments show that photoconductive detectors exhibit the best sensitivity for frequencies up to 3 GHz. © 1994 John Wiley & Sons, Inc.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research