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Comparison of InGaAs/InP photodetectors for microwave applications
Author(s) -
Peredo E.,
Decoster D.,
Gouy J. P.,
Vilcot J. P.,
Constant M.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070713
Subject(s) - photodetector , optoelectronics , photodiode , microwave , materials science , indium phosphide , photoconductivity , diode , laser , semiconductor , gallium arsenide , detector , sensitivity (control systems) , wavelength , indium gallium arsenide , optics , electronic engineering , physics , telecommunications , engineering
The purpose of this article is to compare the microwave performance of three photodetector types, an InGaAs/InP p‐i‐n photodiode, an interdigitated InAlAs/InGaAs/InP metal‐semiconductor‐metal (MSM) photodiode, and an interdigitated InGaAs/InP photo‐conductor (PC). Static and dynamic characterizations have been carried out at 1.3‐μm wavelength using a directly modulated laser diode. Our experiments show that photoconductive detectors exhibit the best sensitivity for frequencies up to 3 GHz. © 1994 John Wiley & Sons, Inc.