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Optical low‐coherence reflectometry (OLCR) for dimensional monitoring of sheet‐grown silicon
Author(s) -
Lawson C. M.,
Michael R. R.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070703
Subject(s) - reflectometry , flatness (cosmology) , silicon , coherence (philosophical gambling strategy) , materials science , optics , optoelectronics , silicon on insulator , physics , computer science , time domain , cosmology , quantum mechanics , computer vision
We report cross‐sectional thickness and flatness measurements for edge‐defined film‐fed growth (EFG) solar silicon using optical low coherence reflectometry (OLCR). The measurement accuracy is ±1.5 μm with the sensor head positioned 1 cm away from the EFG silicon under test. © 1994 John Wiley & Sons, Inc.