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High‐efficiency InGaAs/InGaAsP compressively strained multiple‐quantum‐well laser diode
Author(s) -
Ogita Shouichi,
Kobayashi Hirohiko,
Higashi Toshio,
Okazaki Niro,
Aoki Osamu,
Soda Haruhisa
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070315
Subject(s) - optoelectronics , materials science , diode , quantum well , laser , laser diode , amplifier , current density , gallium arsenide , optics , physics , cmos , quantum mechanics
The characteristics of the InGaAs/InGaAsP compressively strained multiple‐quantum‐well laser diodes with thin wells were studied experimentally to realize the pumping laser diode for the optical‐fiber amplifier. High external quantum efficiency and comparatively low threshold current density were obtained when the thickness of the well was reduced to less than 2 nm. It was also found that the characteristic temperature depends only on the optical confinement to the wells when the optical confinement factor is smaller than 1.5%. Output power as high as 210 mW was demonstrated in the coated sample with the optimized well structure. © 1994 John Wiley & Sons, Inc.