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InP‐based lasers on Si substrates with microcleaved mirrors
Author(s) -
Sugo M.,
Mori H.,
Itoh Y.,
Tachikawa M.,
Sakai Y.
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070314
Subject(s) - laser , substrate (aquarium) , optoelectronics , cleave , materials science , diode , wavelength , optics , quantum well , chemistry , physics , oceanography , geology , dna , biochemistry
An InP‐based multiple quantum‐well laser diode on a Si substrate with microcleaved mirrors exhibits cw operation at room temperature. Microcleaved mirrors can be fabricated without having to cleave a Si substrate. The laser emits at a 1.54‐μm wavelength and exhibits stable operation even after more than 1000 hours. © 1994 John Wiley & Sons, Inc.