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High‐power 0.98‐μm strained‐layer quantum‐well lasers with InGaP cladding
Author(s) -
Ijichi Tetsuro,
Ohkubo Michio,
Iketani Akira,
Kikuta Toshio
Publication year - 1994
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.4650070313
Subject(s) - cladding (metalworking) , laser , materials science , optoelectronics , quantum well , gallium arsenide , polyimide , layer (electronics) , optics , nanotechnology , composite material , physics
Recent progress on InGaAs/GaAs strained‐layer quantum‐well lasers using InGaP cladding are reported. The 0.98‐, 1.02‐, and 1.06‐μm polyimide buried ridge waveguide lasers fabricated by using selective chemical etching are applicable to high‐power use. Further, employing InGaAsP layers lattice matched to GaAs enables the realization of GRIN‐SCH lasers, which is expected to be a technique to improve the laser characteristics. © 1994 John Wiley & Sons, Inc.