High‐speed modulation of GaAs/AlGaAs multiple‐quantum‐well (MQW) asymmetric Fabry‐Perot (ASFP) reflection modulator | Zendy

Nawaz M. | Zendy; Olsen Borgar T. | Zendy; MaCilvaney K. | Zendy

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High‐speed modulation of GaAs/AlGaAs multiple‐quantum‐well (MQW) asymmetric Fabry‐Perot (ASFP) reflection modulator

Author(s) -

Nawaz M.,

Olsen Borgar T.,

MaCilvaney K.

Publication year - 1994

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.4650070311

Subject(s) - fabry–pérot interferometer , optoelectronics , optical modulator , optics , wavelength , modulation (music) , voltage , materials science , quantum well , electro absorption modulator , electro optic modulator , reflection (computer programming) , bandwidth (computing) , physics , phase modulation , telecommunications , laser , quantum dot laser , engineering , computer science , quantum mechanics , phase noise , acoustics , programming language

We report the high‐frequency performance of GaAs/AlGaAs multiple‐quantum‐well‐ (MQW‐) based asymmetric Fabry‐Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was ∼600 MHz at an applied voltage of only 5 V at a wavelength of ∼854 nm. The differential contrast of the modulator was 4.0 at an applied voltage of 12.5 at a wavelength of 863 nm. © 1994 John Wiley & Sons, Inc.

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